Chapter
Apr 26, 2012
Microstructure Evolution of Atomic Layer Deposited Zinc-Oxide Films
Authors: R. Kotha, D. Elam, J. Hoy, G. Collins, R. Hackworth, C. Chen, A. Chabanov, and A. AyonAuthor Affiliations
Publication: Earth and Space 2010: Engineering, Science, Construction, and Operations in Challenging Environments
Abstract
We report the characterization of Zinc Oxide (ZnO) thin films deposited employing an Atomic Layer Deposition (ALD) tool, at a temperature of 100°C on 3-inch, 〈100〉 silicon substrates. Various parameters such as film thickness, film stress, surface energy, index of refraction and surface roughness were measured for as-deposited films as well as for films annealed up to 900°C. SEM micrographs were taken at each annealed temperature, and it was observed that the surface morphology of ZnO films changed from a rice-like grain structure at 100°C to a well-defined polycrystalline structure at 900°C.
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© 2010 American Society of Civil Engineers.
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Published online: Apr 26, 2012
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R. Kotha
MEMS Research Lab, University of Texas at San Antonio, One UTSA Circle, San Antonio TX 78249
D. Elam
Department of Physics and Astronomy, University of Texas at San Antonio, One UTSA Circle, San Antonio TX 78249
J. Hoy
MEMS Research Lab, University of Texas at San Antonio, One UTSA Circle, San Antonio TX 78249
G. Collins
Department of Physics and Astronomy, University of Texas at San Antonio, One UTSA Circle, San Antonio TX 78249
R. Hackworth
No affiliation information available.
C. Chen
Department of Physics and Astronomy, University of Texas at San Antonio, One UTSA Circle, San Antonio TX 78249
A. Chabanov
Department of Physics and Astronomy, University of Texas at San Antonio, One UTSA Circle, San Antonio TX 78249
A. Ayon
MEMS Research Lab, University of Texas at San Antonio, One UTSA Circle, San Antonio TX 78249 and Department of Physics and Astronomy, University of Texas at San Antonio, One UTSA Circle, San Antonio TX 78249
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