Technical Papers
Jun 17, 2015

Effect of Electrical Model, Temperature, and Generation Rate on the Photovoltaic Module Parameters

Publication: Journal of Energy Engineering
Volume 142, Issue 3

Abstract

This paper proposes a two-diode model to represent the photovoltaic cell. This model requires only three parameters (photocurrent, diffusion, and recombination of the dark current). The analytical resolution of continuity equations in each region of a crystalline solar cell enabled the determination of the expressions of diffusion and recombination of dark currents. New relationships are proposed giving the expressions of these currents as a function of their reference values, which are determined from both the data provided by the manufacturer and the different temperature values. This study indicated how the parameters of the proposed model were determined. Predicted current–voltage curves were compared with the De Soto one-diode model and experimental data from a building integrated photovoltaic facility at the National Institute of Standards and Technology (NIST) for two different cell technologies (single crystalline, polycrystalline). The maximum power calculated by the proposed model was calculated to compare the single-diode of the Soto model to the two cell type at the four conditions of generation rate. The proposed simple and easy model shows a better agreement with the NIST data than the De Soto one.

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Published In

Go to Journal of Energy Engineering
Journal of Energy Engineering
Volume 142Issue 3September 2016

History

Received: Sep 11, 2014
Accepted: Mar 24, 2015
Published online: Jun 17, 2015
Discussion open until: Nov 17, 2015
Published in print: Sep 1, 2016

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Authors

Affiliations

Salhi Hanen, Ph.D. [email protected]
Ph.D. Student, Dept. of Electrical Engineering, Laboratory of Electronics and Information Technology, ENIS, Univ. of Sfax, Sfax, Tunisia (corresponding author). E-mail: [email protected]
Ben Amar Mohamed, Ph.D. [email protected]
Assistant Professor, Dept. of Physics, FSS, BP 3038, Univ. of Sfax, Sfax, Tunisie. E-mail: [email protected]
Samet Hekmet, Ph.D. [email protected]
Professor, Dept. of Electrical Engineering, Laboratory of Electronics and Information Technology, ENIS, Univ. of Sfax, Sfax, Tunisia. E-mail: [email protected]

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