Statistics of Voltage Processes in Random Environment

A method is developed to characterize the performance of voltage processes X(t) harvested from primary-absorber dynamical systems subjected to Gaussian forcing functions. The method is based on properties of the Slepian model of X(t) and Monte Carlo simulation. Statistics are calculated for excursions of X(t) above levels which can be related to energy demand. The duration and the area of these excursions are used as metrics for the voltage process. Their statistics depend on the topology and the parameters of primary-absorber dynamical systems, which can be optimized to maximize the output voltage. This article is available in the ASME Digital Collection at https://doi.org/10.1115/1.4049741.